The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2021
Filed:
Feb. 14, 2019
Applicant:
Gigadevice Semiconductor (Beijing) Inc., Beijing, CN;
Inventor:
Minyi Chen, Beijing, CN;
Assignee:
GigaDevice Semiconductor (Beijing) Inc., Beijing, CN;
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/10 (2006.01); G11C 16/04 (2006.01); G11C 16/26 (2006.01); G11C 16/10 (2006.01); G11C 29/52 (2006.01); G11C 16/34 (2006.01); H01L 27/11524 (2017.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G06F 11/1068 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01); G11C 16/3459 (2013.01); G11C 29/52 (2013.01); G11C 11/5628 (2013.01); G11C 11/5642 (2013.01); H01L 27/11524 (2013.01);
Abstract
Disclosed are a nonvolatile memory and an operation method thereof. The nonvolatile memory includes a memory cell array and a controller. The controller is configured to: read out raw data from a plurality of memory cells in the memory cell array; correct the raw data by using error correction code (ECC) data to obtain corrected data; determine an address of a memory cell having a data loss error in the plurality of memory cells; and program the memory cell having the data loss error. After the ECC correction in the read operation, the data loss error is corrected by a program operation.