The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 12, 2021

Filed:

Aug. 06, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Yong-Hwa Lee, Seoul, KR;

Young-Ho Park, Anyang-si, KR;

Byung-Ki Lee, Hwaseong-si, KR;

Hyung-Chul Jang, Suwon-si, KR;

Je-Kyeom Jeon, Siheung-si, KR;

Sung-Kug Cho, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01); G06F 11/14 (2006.01); G06F 16/901 (2019.01); G06F 16/23 (2019.01);
U.S. Cl.
CPC ...
G06F 3/0659 (2013.01); G06F 3/065 (2013.01); G06F 3/0614 (2013.01); G06F 3/0679 (2013.01); G06F 3/0685 (2013.01); G06F 11/1448 (2013.01); G06F 16/2358 (2019.01); G06F 16/901 (2019.01); G06F 2201/84 (2013.01);
Abstract

A method of operating a key-value storage device includes a key-value storage device receiving from a host a first command including a first key, a first value, and a first snapshot identification (ID), the key-value storage device generating a first snapshot entry including the first snapshot ID, the first key, and a first physical address in a non-volatile memory device at which the first value is written, in response to the received first command, receiving from the host a second command including the first key, a second value, and a second snapshot ID, and in response to the received second command, the key-value storage device generating a second snapshot entry including the second snapshot ID, the first key, and a second physical address in the non-volatile memory device at which the second value is written.


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