The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 12, 2021

Filed:

Dec. 16, 2015
Applicant:

University-industry Cooperation Group of Kyung Hee University, Yongin-si, KR;

Inventors:

Sun Kook Kim, Yongin-si, KR;

Seong In Hong, Namyangju-si, KR;

Young Ki Hong, Seoul, KR;

Dong Han Kim, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/041 (2006.01); G02B 27/01 (2006.01); H01L 31/10 (2006.01); G06F 3/042 (2006.01); H01L 31/09 (2006.01); G06K 9/00 (2006.01); H01L 31/0224 (2006.01); H01L 31/112 (2006.01);
U.S. Cl.
CPC ...
G02B 27/01 (2013.01); G06F 3/042 (2013.01); G06F 3/0416 (2013.01); G06K 9/001 (2013.01); G06K 9/0004 (2013.01); G06K 9/0008 (2013.01); H01L 31/022466 (2013.01); H01L 31/09 (2013.01); H01L 31/10 (2013.01); H01L 31/112 (2013.01); B60K 2370/1438 (2019.05); B60K 2370/33 (2019.05);
Abstract

Disclosed is a photoreactive sensor including an optical amplification phototransistor, in which a non-overlapping region that does not overlap with a local gate electrode between a source electrode and a drain electrode is formed and which senses an optical image through the non-overlapping region for amplify photoconductivity; and a contact light emitting device that is formed on the optical amplification phototransistor and generates the optical image corresponding to a contacted surface upon contact with an object.


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