The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2021
Filed:
Aug. 21, 2018
Applicant:
Technion Research and Development Foundation Ltd., Haifa, IL;
Inventor:
Yael Nemirovsky, Haifa, IL;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 27/414 (2006.01); G01J 5/04 (2006.01); H01L 27/144 (2006.01); G01J 5/02 (2006.01); G01J 5/06 (2006.01); G01J 5/00 (2006.01); G01N 27/16 (2006.01);
U.S. Cl.
CPC ...
G01N 27/4141 (2013.01); G01J 5/0014 (2013.01); G01J 5/022 (2013.01); G01J 5/024 (2013.01); G01J 5/045 (2013.01); G01J 5/061 (2013.01); G01N 27/16 (2013.01); H01L 27/1446 (2013.01); G01J 2005/063 (2013.01);
Abstract
A gas sensing device, that may include a suspended gas sensing element, a frame that supports the suspended gas sensing element, and one or more traps for trapping at least one out of Siloxane and silicon dioxide. The suspended gas sensing element may include a gas reactive element that has a gas dependent temperature parameter, and a semiconductor temperature sensing element that is thermally coupled to the gas reactive element, and is configured to generate detection signals that are responsive to a temperature of the gas reactive element. The gas reactive element and the semiconductor temperature sensing element are of microscopic scale.