The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 12, 2021

Filed:

May. 12, 2016
Applicant:

Jiangnan University, Wuxi, CN;

Inventors:

Gang Shi, Wuxi, CN;

Ying Li, Wuxi, CN;

Caihua Ni, Wuxi, CN;

Dawei Wang, Wuxi, CN;

Fei He, Wuxi, CN;

Lifeng Chi, Wuxi, CN;

Nan Lv, Wuxi, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B01J 35/00 (2006.01); H01L 51/42 (2006.01); H01L 21/306 (2006.01); B01J 21/06 (2006.01); B01J 31/38 (2006.01); B01J 37/02 (2006.01); H01L 51/00 (2006.01); C02F 1/72 (2006.01); C30B 29/06 (2006.01); C30B 29/16 (2006.01); C30B 29/58 (2006.01); C30B 29/66 (2006.01); C30B 7/10 (2006.01); C01G 23/053 (2006.01); C30B 29/60 (2006.01); C30B 29/32 (2006.01); B01J 31/06 (2006.01); C02F 1/32 (2006.01); B82Y 40/00 (2011.01); B82Y 30/00 (2011.01); C02F 101/30 (2006.01);
U.S. Cl.
CPC ...
B01J 35/0033 (2013.01); B01J 21/06 (2013.01); B01J 21/063 (2013.01); B01J 31/06 (2013.01); B01J 35/004 (2013.01); B01J 35/0006 (2013.01); B01J 35/0013 (2013.01); B01J 37/0217 (2013.01); B01J 37/0228 (2013.01); B01J 37/0244 (2013.01); C01G 23/053 (2013.01); C30B 7/10 (2013.01); C30B 29/06 (2013.01); C30B 29/16 (2013.01); C30B 29/32 (2013.01); C30B 29/58 (2013.01); C30B 29/60 (2013.01); C30B 29/66 (2013.01); H01L 21/30608 (2013.01); H01L 51/0035 (2013.01); H01L 51/4213 (2013.01); H01L 51/4226 (2013.01); B01J 31/38 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); C01P 2004/16 (2013.01); C01P 2004/62 (2013.01); C01P 2004/64 (2013.01); C02F 1/32 (2013.01); C02F 1/725 (2013.01); C02F 2101/308 (2013.01); C02F 2305/10 (2013.01); Y02W 10/37 (2015.05);
Abstract

The invention relates to a three-dimensional bionic composite material based on refection elimination and double-layer P/N heterojunctions. The preparation method of the composite material comprises: (1) anisotropically etching a silicon wafer with an alkaline solution, to form compactly arranged tetragonal pyramids on the surface of the silicon wafer; (2) performing hydrophilic treatment on the silicon wafer, growing TiO2 crystal seeds on the surface of the silicon wafer, and calcining the silicon wafer in a muffle furnace; (3) putting the silicon wafer obtained in the step (2) into a reaction kettle, and growing TiO2 nano-rods on the side walls of silicon cones by a hydrothermal synthesis method; and (4) depositing PPY nano-particles on the TiO2 nano-rods. The composite material has good refection elimination performance and efficient photogenerated charge separation capability, and is applicable in fields of photo-catalysis, photoelectric conversion devices, solar cells and the like.


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