The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 05, 2021

Filed:

Oct. 18, 2019
Applicant:

Mitsui Mining & Smelting Co., Ltd., Tokyo, JP;

Inventor:

Yoshinori Matsuura, Ageo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05K 3/46 (2006.01); B32B 7/06 (2019.01); B32B 15/04 (2006.01); C23C 14/06 (2006.01); C23C 14/14 (2006.01); C23C 28/00 (2006.01); H05K 3/20 (2006.01); C23C 14/16 (2006.01); C23C 14/18 (2006.01); C23C 14/58 (2006.01); H05K 1/09 (2006.01); H01L 23/15 (2006.01); H05K 3/02 (2006.01); H05K 3/04 (2006.01); H05K 3/10 (2006.01); H05K 3/28 (2006.01);
U.S. Cl.
CPC ...
H05K 3/4652 (2013.01); B32B 7/06 (2013.01); B32B 15/04 (2013.01); C23C 14/06 (2013.01); C23C 14/0605 (2013.01); C23C 14/14 (2013.01); C23C 14/165 (2013.01); C23C 14/185 (2013.01); C23C 14/5873 (2013.01); C23C 28/00 (2013.01); H01L 23/15 (2013.01); H05K 1/09 (2013.01); H05K 3/025 (2013.01); H05K 3/048 (2013.01); H05K 3/205 (2013.01); H05K 3/4688 (2013.01); H05K 3/108 (2013.01); H05K 3/284 (2013.01); H05K 2201/0355 (2013.01); H05K 2201/0358 (2013.01); H05K 2203/016 (2013.01); H05K 2203/1316 (2013.01);
Abstract

There is provided a copper foil provided with a carrier exhibiting a high peeling resistance against the developer in the photoresist developing process and achieving high stability of mechanical peel strength of the carrier. The copper foil provided with a carrier comprises a carrier; an interlayer disposed on the carrier, the interlayer having a first surface adjacent to the carrier and containing 1.0 atom % or more of at least one metal selected from the group consisting of Ti, Cr, Mo, Mn, W and Ni and a second surface remote from the carrier and containing 30 atom % or more of Cu; a release layer disposed on the interlayer; and an extremely-thin copper layer disposed on the release layer.


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