The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 05, 2021

Filed:

Apr. 23, 2019
Applicant:

Delta Electronics,inc., Taoyuan, CN;

Inventors:

Jianping Ying, Taoyuan, CN;

Ming Wang, Taoyuan, CN;

Xiaobo Huang, Taoyuan, CN;

Jun Liu, Taoyuan, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 3/00 (2006.01); H03K 17/16 (2006.01);
U.S. Cl.
CPC ...
H03K 17/168 (2013.01); H03K 17/162 (2013.01);
Abstract

The present disclosure provides a gate circuit and a gate drive circuit for a power semiconductor switch, including: a zener diode and a charge dissipation circuit. A first end of the zener diode is connected to a first end of the charge dissipation circuit and a gate of the power semiconductor switch, a second end of the zener diode is connected to a second end of the charge dissipation circuit and a second end of the power semiconductor switch. A first parasitic capacitor is formed between a first end and the gate of the power semiconductor switch, and a second parasitic capacitor is formed between the gate and the second end of the power semiconductor switch.


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