The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 05, 2021

Filed:

Jan. 24, 2020
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Qubo Zhou, San Diego, CA (US);

Yan Wang, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 5/134 (2014.01); H03K 19/003 (2006.01); H03K 19/0185 (2006.01);
U.S. Cl.
CPC ...
H03K 5/134 (2014.07); H03K 19/00384 (2013.01); H03K 19/018557 (2013.01);
Abstract

Certain aspects of the present disclosure generally relate to a power stage. The power stage generally includes a first transistor, a second transistor having a drain coupled to a drain of the first transistor, a first gate drive circuit coupled between an input node of the power stage and a gate of the first transistor, and a second gate drive circuit having a first signal path coupled between the input node and a gate of the second transistor. In certain aspects, the second gate drive circuit comprises a plurality of buffers in the first signal path, and a plurality of electronic devices coupled to the plurality of buffers and configured to apply a delay associated with driving the gate of the second transistor to track a delay associated with driving the gate of the first transistor via the first gate drive circuit.


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