The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 05, 2021

Filed:

Jun. 24, 2019
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Young-Suk Choi, Los Gatos, CA (US);

Won Ho Choi, San Jose, CA (US);

Assignee:

SanDisk Technologies LLC, Addison, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01); H01L 27/22 (2006.01); G11C 11/16 (2006.01); G06N 3/063 (2006.01); G06N 3/04 (2006.01); G11C 11/00 (2006.01); G11C 11/54 (2006.01); G11C 11/401 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); G06N 3/04 (2013.01); G06N 3/063 (2013.01); G11C 11/005 (2013.01); G11C 11/161 (2013.01); G11C 11/1675 (2013.01); G11C 11/54 (2013.01); H01L 27/222 (2013.01); H01L 43/08 (2013.01); G11C 11/401 (2013.01);
Abstract

Apparatuses, systems, and methods are disclosed for magnetoresistive random access memory. A magnetic tunnel junction (MTJ) for storing data may include a reference layer. A free layer of an MTJ may be separated from a reference layer by a barrier layer. A free layer may be configured such that one or more resistance states for an MTJ correspond to one or more positions of a magnetic domain wall within the free layer. A domain stabilization layer may be coupled to a portion of a free layer, and may be configured to prevent migration of a domain wall into the portion of the free layer.


Find Patent Forward Citations

Loading…