The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2021
Filed:
Mar. 09, 2017
Applicant:
University-industry Foundation (Uif), Yonsei University, Seoul, KR;
Inventors:
Mann Ho Cho, Seoul, KR;
Hye Jin Choi, Gyeonggi-do, KR;
Ji Min Chae, Seoul, KR;
Han Bum Park, Seoul, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 35/26 (2006.01); H01L 35/16 (2006.01); H01L 35/34 (2006.01); H01L 35/32 (2006.01); H01L 27/16 (2006.01); H01L 35/00 (2006.01); H01L 21/06 (2006.01); H01L 35/18 (2006.01); H01L 35/02 (2006.01); H01L 35/12 (2006.01);
U.S. Cl.
CPC ...
H01L 35/26 (2013.01); H01L 35/16 (2013.01); H01L 35/32 (2013.01); H01L 35/34 (2013.01); H01L 21/06 (2013.01); H01L 27/16 (2013.01); H01L 35/00 (2013.01); H01L 35/02 (2013.01); H01L 35/12 (2013.01); H01L 35/18 (2013.01);
Abstract
Provided are a thermoelectric material, a method of fabricating the same, and a thermoelectric device. The thermoelectric material includes a first material layer including a chalcogen element; and a second material layer including a reaction compound between the chalcogen element and a metal element, wherein the thermoelectric material has a structure in which the first material layer is inserted in the second material layer.