The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2021
Filed:
Feb. 21, 2019
Texas Instruments Incorporated, Dallas, TX (US);
Sheldon Douglas Haynie, Morgan Hill, CA (US);
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Abstract
An IC with a split-gate transistor includes a substrate doped the second conductivity type having a semiconductor surface layer doped the first conductivity type. The transistor includes a first doped region formed as an annulus, a second doped region including under the first doped region, and a third doped region under the second doped region, all coupled together and doped the second conductivity type. A fourth doped region doped the first conductivity type is above the third doped region. A fifth doped region doped the first conductivity type is outside the annulus. Sixth doped regions doped the first conductivity type include a first sixth doped region surrounded by the annulus in the semiconductor surface layer and a second sixth doped region in the fifth doped region. Field oxide includes a field oxide portion between the fifth and the first doped region. A field plate is on the field oxide portion.