The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2021
Filed:
Oct. 30, 2018
Joled Inc., Tokyo, JP;
Yasuhiro Terai, Tokyo, JP;
JOLED INC., Tokyo, JP;
Abstract
A semiconductor device includes a substrate, a transistor, a storage capacitor, a first insulating layer, and a second insulating layer. The transistor includes a semiconductor film, a gate insulating film, a first gate electrode, and a second gate electrode. The semiconductor film, the gate insulating film, and the first gate electrode are provided in this order from the substrate. The second gate electrode faces the first gate electrode across the semiconductor film. The storage capacitor includes a lower electrode and an upper electrode that are provided in this order from the substrate. The upper electrode faces the lower electrode and includes the same material as the semiconductor film. The first insulating layer is provided between the second gate electrode and the semiconductor film. The second insulating layer is provided between the lower electrode and the upper electrode and has a smaller thickness than the first insulating layer.