The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2021
Filed:
May. 30, 2016
Nissan Motor Co., Ltd., Yokohama, JP;
Wei Ni, Kanagawa, JP;
Tetsuya Hayashi, Kanagawa, JP;
Yasuaki Hayami, Kanagawa, JP;
Ryota Tanaka, Kanagawa, JP;
Abstract
A semiconductor device includes: a substrate; a drift region formed on a main surface of the substrate; a well region formed in a main surface of the drift region; a source region formed in the well region; a gate groove formed from the main surface of the drift region in a perpendicular direction while being in contact with the source region, the well region, and the drift region; a drain region formed in the main surface of the drift region; a gate electrode formed on a surface of the gate groove with a gate insulating film interposed therebetween; a protection region formed on a surface of the gate insulating film facing the drain region; and a connection region formed in contact with the well region and the protection region.