The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2021
Filed:
Jun. 03, 2019
Hyundai Autron Co., Ltd., Seoul, KR;
Ju Hwan Lee, Seongnam-si, KR;
Tae Young Park, Gunpo-si, KR;
Hyuk Woo, Incheon, KR;
Min Gi Kang, Seoul, KR;
Young Joon Kim, Yongin-si, KR;
Tae Youp Kim, Seoul, KR;
Seong-hwan Yun, Seoul, KR;
Seon-hyeong Jo, Seoul, KR;
Jeong Mok Ha, Seoul, KR;
HYUNDAI AUTRON CO., LTD., Seoul, KR;
Abstract
The power semiconductor device includes: a first trench gate and a second trench gate in a stripe shape extending in one direction in parallel and spaced apart from each other in a substrate; a third trench gate in a ladder shape extending in a direction different from the one direction between the first trench gate and the second trench gate in the substrate; a first conductive type body area each disposed between the first trench gate, the second trench gate and the third trench gate, respectively, in the substrate; a pair of first conductive type floating first areas surrounding each of bottom surfaces and at least one side of the first trench gate and the second trench gate in the substrate; and a first conductive type floating second area surrounding a bottom surface of the third trench gate in the substrate.