The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2021
Filed:
Jul. 25, 2017
Fuji Electric Co., Ltd., Kawasaki, JP;
Tsuyoshi Araoka, Tsukuba, JP;
Yusuke Kobayashi, Tsukuba, JP;
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Abstract
A silicon carbide semiconductor device has an n-type drift layer provided on a front surface of an n-type silicon carbide substrate. In a surface layer of the n-type drift layer, a first p-type region is provided. On a front surface side of the n-type silicon carbide substrate, a trench is formed. The first p-type region includes a deep first p-type region and a shallow first p-type region, the deep first p-type region being at a position farther toward a drain electrode than a bottom of the trench is and the shallow first p-type region being at a position closer to a source region than the bottom of the trench is. An impurity concentration of the shallow first p-type region is lower than an impurity concentration of the deep first p-type region.