The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2021
Filed:
Apr. 06, 2020
Applicant:
Elwha Llc, Bellevue, WA (US);
Inventors:
Gleb M. Akselrod, Durham, NC (US);
Erik E. Josberger, Seattle, WA (US);
Mark C. Weidman, Bellevue, WA (US);
Assignee:
Elwha LLC, Bellevue, WA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); G02B 5/18 (2006.01); G03H 1/04 (2006.01); H04N 5/225 (2006.01); H04N 5/374 (2011.01); B29D 11/00 (2006.01); B82Y 20/00 (2011.01); G03H 1/02 (2006.01); H01Q 1/38 (2006.01); H01Q 3/44 (2006.01); H01Q 15/00 (2006.01); H01Q 15/02 (2006.01); H01Q 15/14 (2006.01); G01S 7/481 (2006.01); G01S 17/10 (2020.01); G01S 17/42 (2006.01); G01S 17/89 (2020.01); G02F 1/01 (2006.01); G02F 1/1339 (2006.01); G02F 1/1341 (2006.01); H01J 37/317 (2006.01); H01J 37/32 (2006.01); G03H 1/00 (2006.01); G02F 1/29 (2006.01); G02F 1/1334 (2006.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14625 (2013.01); B29D 11/00326 (2013.01); B82Y 20/00 (2013.01); G01S 7/4813 (2013.01); G01S 7/4817 (2013.01); G01S 17/10 (2013.01); G01S 17/42 (2013.01); G01S 17/89 (2013.01); G02B 5/1809 (2013.01); G02F 1/0107 (2013.01); G02F 1/1339 (2013.01); G02F 1/1341 (2013.01); G02F 1/292 (2013.01); G03H 1/00 (2013.01); G03H 1/0244 (2013.01); G03H 1/0443 (2013.01); H01J 37/3174 (2013.01); H01J 37/32816 (2013.01); H01L 27/14643 (2013.01); H01Q 1/38 (2013.01); H01Q 3/44 (2013.01); H01Q 15/002 (2013.01); H01Q 15/0066 (2013.01); H01Q 15/02 (2013.01); H01Q 15/148 (2013.01); H04N 5/2253 (2013.01); H04N 5/374 (2013.01); G02F 1/13342 (2013.01); G02F 2202/103 (2013.01); G02F 2202/30 (2013.01); G02F 2202/36 (2013.01); G03F 7/2041 (2013.01); G03F 7/2059 (2013.01); G03H 2240/13 (2013.01); H01J 2237/334 (2013.01);
Abstract
The method is provided for fabricating an optical metasurface. The method may include depositing a conductive layer over a holographic region of a wafer and depositing a dielectric layer over the conducting layer. The method may also include patterning a hard mask on the dielectric layer. The method may further include etching the dielectric layer to form a plurality of dielectric pillars with a plurality of nano-scale gaps between the pillars.