The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2021
Filed:
Aug. 29, 2019
Rohm Co., Ltd., Kyoto, JP;
Katsuhisa Nagao, Kyoto, JP;
Noriaki Kawamoto, Kyoto, JP;
ROHM CO., LTD., Kyoto, JP;
Abstract
A semiconductor device () is manufactured which includes a SiC epitaxial layer (), a plurality of transistor cells () that are formed in the SiC epitaxial layer () and that are subjected to ON/OFF control by a predetermined control voltage, a gate electrode () that faces a channel region () of the transistor cells () in which a channel is formed when the semiconductor device () is in an ON state, a gate metal () that is exposed at the topmost surface for electrical connection with the outside and that is electrically connected to the gate electrode () while being physically separated from the gate electrode (), and a built-in resistor () that is made of polysilicon and that is disposed below the gate metal () so as to electrically connect the gate metal () and the gate electrode () together.