The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 05, 2021

Filed:

Jan. 04, 2019
Applicant:

Ablic Inc., Chiba, JP;

Inventor:

Hideo Yoshino, Chiba, JP;

Assignee:

ABLIC INC., Chiba, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01); G05F 3/16 (2006.01); G05F 3/24 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0883 (2013.01); G05F 3/16 (2013.01); G05F 3/242 (2013.01); H01L 29/1033 (2013.01); H01L 29/78 (2013.01); H01L 29/7838 (2013.01); H01L 21/823412 (2013.01);
Abstract

The reference voltage generation device includes a constant current circuit which includes a first MOS transistor, and a voltage generation circuit which includes a second MOS transistor. The first MOS transistor includes a gate electrode, a source region, a drain region, and a channel impurity region which have a first conductivity type and has a first channel size. The second MOS transistor includes a gate electrode of a second conductivity type, and a source region, a drain region, and a channel impurity region which have the first conductivity type and has a second channel size different from the first channel size. The channel impurity regions have different impurity concentrations.


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