The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 05, 2021

Filed:

Sep. 05, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Vassilios Gerousis, Liberty Hill, TX (US);

Rwik Sengupta, Leander, TX (US);

Joon Goo Hong, Austin, TX (US);

Kevin Michael Traynor, Livingston, TX (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5286 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01);
Abstract

A tap cell configured to enable electrical connection from a buried power rail of an integrated circuit to a power distribution network includes. The tap cell includes a buried power rail layer including VDD and VSS power supply lines, insulating layers and metal layers alternately arranged on the buried power rail layer, a first power supply interconnect in metal layer M1 or higher electrically coupled to the VDD power supply line, and a second power supply interconnect in metal layer M1 or higher electrically connected to the VSS power supply line. The first power supply interconnect and the second power supply interconnect are configured to be electrically connected to the power distribution network, and the VDD and VSS power supply lines are configured to supply power from the power distribution network to the buried power rail of the integrated circuit. The tap cell is free of any active semiconductor devices.


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