The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2021
Filed:
Jul. 24, 2019
Wonik Ips Co., Ltd., Pyeongtaek-si, KR;
Won Jun Yoon, Seoul, KR;
WONIK IPS CO., LTD., Pyeongtaek-si, KR;
Abstract
Provided is a method of depositing tungsten, in which depositing a tungsten nucleation layer is formed by performing a unit cycle at least once, wherein the unit cycle includes an absorption step in which a first process gas is provided on a substrate such that at least a portion of the first process gas is absorbed on the substrate, a first purge step in which a purge gas is provided on the substrate to purge the first process gas which has not been absorbed on the substrate, a reaction step in which a gas containing tungsten is provided on the substrate as a second process gas to form a unit deposition film on the substrate, a second purge step in which a purge gas is provided on the substrate to purge a reaction by-product on the substrate, a processing step in which a processing gas containing a hydrogen (H) element is provided on the substrate to reduce the concentration of an impurity in the unit deposition film, and a third purge step in which a purge gas is provided on the substrate to purge the processing gas on the substrate.