The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 05, 2021

Filed:

Oct. 25, 2017
Applicant:

Industry-university Cooperation Foundation Hanyang University, Seoul, KR;

Inventors:

Jin Pyo Hong, Seoul, KR;

Hae Soo Park, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); G11C 11/56 (2006.01); G06N 3/063 (2006.01); H01L 43/12 (2006.01); H01L 43/08 (2006.01); H01L 43/02 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
G11C 11/161 (2013.01); G06N 3/063 (2013.01); G11C 11/56 (2013.01); H01L 27/222 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01); G11C 11/1675 (2013.01);
Abstract

A structure and operation method of a spin device using a magnetic domain wall movement by spin orbit torque are provided. It is possible to invert the magnetization of free layer of the device at a low value of current by using the spin orbital torque, and the structure of the device is simpler than that of the conventional CMOS. Further, a spin synapse device to which a free layer of multiaxial anisotropy is applied in addition to movement of a magnetic domain wall is provided. Since the magnetoresistance can be adjusted according to the angle of the pinned layer and the free layer, it is easy to apply multi-bit and it can be applied to artificial synapse technology.


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