The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2021
Filed:
Sep. 29, 2017
Lg Chem, Ltd., Seoul, KR;
Jong Hun Kim, Daejeon, KR;
Je Kyun Lee, Daejeon, KR;
LG CHEM, LTD., Seoul, KR;
Abstract
The present invention relates to a low-temperature/atmospheric-pressure method for producing synthetic hectorite and synthetic hectorite produced using the same, and more particularly, provides a method for producing synthetic hectorite at a low temperature and atmospheric pressure and synthetic hectorite produced using the same such that: a crystallization reaction may be carried out under a low-temperature/atmospheric-pressure condition by introducing a step of forming a precipitate and using a weak basic catalyst when the Li—Mg precipitates are formed; a reaction time may be reduced; synthetic hectorite with excellent major application properties may be prepared; and the properties may be easily controlled by controlling a composition ratio of a reactant.