The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2021
Filed:
Feb. 07, 2019
Canon Kabushiki Kaisha, Tokyo, JP;
Kouji Hasegawa, Kawasaki, JP;
Koji Sasaki, Nagareyama, JP;
CANON KABUSHIKI KAISHA, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor substrate includes: forming a barrier metal layer on a semiconductor substrate; forming a resist mask on the barrier metal layer; performing dry etching on a portion of the barrier metal layer, which is exposed from an opening portion of the resist mask, so that the dry etching is prevented from reaching a top surface of a layer immediately under the barrier metal layer; performing wet etching on a portion of the barrier metal layer exposed by the dry etching so that the wet etching reaches the top surface of the layer immediately under the barrier metal layer and a portion of the barrier metal layer remains; and stripping the resist mask.