The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 05, 2021

Filed:

Dec. 10, 2019
Applicant:

Greatbatch Ltd., Clarence, NY (US);

Inventors:

Robert A. Stevenson, Canyon Country, CA (US);

Xiaohong Tang, Williamsville, NY (US);

William C. Thiebolt, Tonawanda, NY (US);

Christine A. Frysz, Orchard Park, NY (US);

Keith W. Seitz, Clarence Center, NY (US);

Richard L. Brendel, Carson City, NV (US);

Thomas Marzano, East Amherst, NY (US);

Jason Woods, Carson City, NV (US);

Dominick J. Frustaci, Williamsville, NY (US);

Steven W. Winn, Horseheads, NY (US);

Assignee:

Greatbatch Ltd., Clarence, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
A61N 1/37 (2006.01); A61N 1/375 (2006.01); A61N 1/05 (2006.01); H01G 4/35 (2006.01); H01G 2/10 (2006.01); H01R 43/00 (2006.01); A61N 1/372 (2006.01); C22C 29/12 (2006.01);
U.S. Cl.
CPC ...
A61N 1/3754 (2013.01); A61N 1/05 (2013.01); H01G 2/103 (2013.01); H01G 4/35 (2013.01); H01R 43/00 (2013.01); A61N 1/372 (2013.01); A61N 1/375 (2013.01); B22F 2998/10 (2013.01); C22C 29/12 (2013.01); Y10T 156/1052 (2015.01);
Abstract

A method for making a dielectric substrate configured for incorporation into a hermetically sealed feedthrough is described. The method includes forming a via hole through a green-state dielectric substrate. A platinum-containing paste is filled into at least 90% of the volume of the via hole. The green-state dielectric substrate is then subjected to a heating protocol including: a binder bake-out heating portion performed at a temperature ranging from about 400° C. to about 700° C. for a minimum of 4 hours; a sintering heating portion performed at a temperature ranging from about 1,400° C. to about 1,900° C. for up to 6 hours; and a cool down portion at a rate of up to 5°/minute from a maximum sintering temperature down to about 1,000° C., then naturally to room temperature. The thusly manufacture dielectric substrate is then positioned in an opening in a ferrule that is configured to be attached to a metal housing of an active implantable medical device. The dielectric substrate is hermetically sealed to the ferrule with the sintered platinum material in the via hole providing a conductive pathway from a body fluid side to a device side of the ferrule.


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