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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10879423 B1

PDFFull Text
Date of Patent:
Dec. 29, 2020

Filed:

Nov. 01, 2016

Ultraviolet light-emitting element

Applicants:

Panasonic Corporation, Osaka, JP;

Riken, Saitama, JP;

Inventors:

Takayoshi Takano, Osaka, JP;

Takuya Mino, Osaka, JP;

Jun Sakai, Osaka, JP;

Norimichi Noguchi, Osaka, JP;

Hideki Hirayama, Saitama, JP;

Assignees:

PANASONIC CORPORATION, Osaka, JP;

RIKEN, Saitama, JP;

Attorney:

Greenblum & Bernstein, P.L.C.

Primary Examiner:

Cuong Q Nguyen

Assistant Examiner:

Peter M Albrecht

Int. Cl.
CPC ...
H01L 33/32 (2010.01); H01L 33/06 (2010.01); H01L 33/02 (2010.01); H01L 33/00 (2010.01); H01L 33/14 (2010.01); H01L 33/24 (2010.01); H01L 33/38 (2010.01); H01L 33/12 (2010.01);
U.S. Cl.
CPC ...
H01L 33/325 (2013.01); H01L 33/007 (2013.01); H01L 33/0025 (2013.01); H01L 33/025 (2013.01); H01L 33/06 (2013.01); H01L 33/14 (2013.01); H01L 33/24 (2013.01); H01L 33/32 (2013.01); H01L 33/38 (2013.01); H01L 33/12 (2013.01);
Abstract

An ultraviolet light-emitting element includes: a multilayer stack in which an n-type AlGaN layer, a light-emitting layer, a first p-type AlGaN layer, and a second p-type AlGaN layer are arranged in this order; a negative electrode; and a positive electrode. The first p-type AlGaN layer has a larger Al composition ratio than first AlGaN layers serving as well layers. The second p-type AlGaN layer has a larger Al composition ratio than the first AlGaN layers. The first p-type AlGaN layer and the second p-type AlGaN layer both contain Mg. The second p-type AlGaN layer has a higher maximum Mg concentration than the first p-type AlGaN layer. The second p-type AlGaN layer includes a region where an Mg concentration increases in a thickness direction thereof as a distance from the first p-type AlGaN layer increases in the thickness direction.

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