The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2020
Filed:
Jul. 08, 2019
University of Iowa Research Foundation, Iowa City, IA (US);
Aaron Muhowski, Iowa City, IA (US);
Cassandra Bogh, Iowa City, IA (US);
John Prineas, Iowa City, IA (US);
Jon Olesberg, Iowa City, IA (US);
University of Iowa Research Foundation, Iowa City, IA (US);
Abstract
In embodiments described herein, a light emitting diode device comprises an emission device with an emission region and a bottom contact layer. The emission region comprises n cascading emission layers, where n is a whole and positive number. The n cascading emission layers comprise at least one superlattice structure. In an embodiment, a tunnel junction is spaced between a first superlattice structure and a second superlattice structure. In an embodiment, light extraction is enhanced with a trapezoidal shaped chip, a roughened exit interface, and encapsulation of the chip with a hemispherical shaped polymer. In an embodiment, the superlattice structure may be repeated periods of InAs/AlGaInSb. In another embodiment, the superlattice may be repeated periods of InAs/GaInSb/InAs/AlAsSb. In another embodiment, between the bottom contact layer and the emission region is a tunnel junction where the bottom contact layer and the tunnel junction form an n-type anode layer.