The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2020
Filed:
Feb. 01, 2019
Applicant:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Inventors:
Honam Kwon, Kawasaki, JP;
Toshiya Yonehara, Kawasaki, JP;
Hitoshi Yagi, Yokohama, JP;
Ikuo Fujiwara, Yokohama, JP;
Kazuhiro Suzuki, Minato, JP;
Assignee:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
G01C 3/08 (2006.01); H01L 31/107 (2006.01); G01S 17/89 (2020.01); H01L 31/028 (2006.01); H01L 31/18 (2006.01); H01L 31/0232 (2014.01); H01L 31/0352 (2006.01); G01S 7/497 (2006.01); H01L 31/102 (2006.01); B60W 40/02 (2006.01);
U.S. Cl.
CPC ...
H01L 31/107 (2013.01); G01S 7/497 (2013.01); G01S 17/89 (2013.01); H01L 31/028 (2013.01); H01L 31/02327 (2013.01); H01L 31/03529 (2013.01); H01L 31/035281 (2013.01); H01L 31/102 (2013.01); H01L 31/1804 (2013.01); B60W 40/02 (2013.01); B60W 2420/52 (2013.01);
Abstract
A photodetector includes a first semiconductor layer and a second semiconductor layer provided on the first semiconductor layer and detecting light. The first semiconductor layer has a cavity portion for reflecting incident light.