The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2020
Filed:
Sep. 20, 2017
Applicant:
Nec Corporation, Tokyo, JP;
Inventor:
Yoshihiro Nambu, Tokyo, JP;
Assignee:
NEC CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0236 (2006.01); H01L 31/0232 (2014.01); H01L 31/18 (2006.01); H01L 31/0352 (2006.01); H01L 31/0224 (2006.01); H01L 31/10 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02366 (2013.01); H01L 31/02327 (2013.01); H01L 31/022408 (2013.01); H01L 31/035218 (2013.01); H01L 31/10 (2013.01); H01L 31/184 (2013.01);
Abstract
In order to provide an optical sensor that is capable of obtaining both an optical trap effect and a moth eye effect with a single texture structure, a semiconductor optical sensor according to the present invention includes a light absorption medium that has a refractive index n and a thickness sufficiently less than a light transmission length, wherein the center wavelength to be observed is defined as λ. The semiconductor optical sensor is characterized by: having, in a light incident surface, a texture structure having a random surface direction and a typical structure scale d defined as in (λ/n).