The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 29, 2020

Filed:

Aug. 09, 2016
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Yosuke Saito, Tokyo, JP;

Yoshiaki Obana, Kanagawa, JP;

Nobuyuki Matsuzawa, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/30 (2006.01); H01L 27/146 (2006.01); H01L 27/28 (2006.01); H01L 51/00 (2006.01); H01L 51/42 (2006.01); H01L 51/44 (2006.01); H04N 5/369 (2011.01);
U.S. Cl.
CPC ...
H01L 27/307 (2013.01); H01L 27/14647 (2013.01); H01L 27/14665 (2013.01); H01L 27/286 (2013.01); H01L 51/006 (2013.01); H01L 51/008 (2013.01); H01L 51/0039 (2013.01); H01L 51/0047 (2013.01); H01L 51/0068 (2013.01); H01L 51/0072 (2013.01); H01L 51/42 (2013.01); H01L 51/4253 (2013.01); H01L 51/442 (2013.01); H04N 5/369 (2013.01); H01L 27/1461 (2013.01); H01L 51/0058 (2013.01); Y02E 10/549 (2013.01);
Abstract

A photoelectric conversion element according to one embodiment of the disclosure includes: a first electrode and a second electrode that are oppositely disposed; and a photoelectric conversion layer that is provided between the first electrode and the second electrode, and includes a high-molecular semiconductor material and a low-molecular material. The high-molecular semiconductor material has an absorption coefficient in a visible light region of 50000 cmor less. The low-molecular material includes an absorption peak in a wavelength range corresponding to one color in the visible light region.


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