The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2020
Filed:
Aug. 27, 2019
Samsung Electronics Co., Ltd., Suwon-si, KR;
Dong Mo Im, Hwaseong-si, KR;
Seung Sik Kim, Hwaseong-si, KR;
Ji Yoon Kim, Hwaseong-si, KR;
Dae Hoon Kim, Hwaseong-si, KR;
Min Woong Seo, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device and an image sensor, the semiconductor device including a substrate; a photoelectric conversion device in the substrate; a first floating diffusion region adjacent to the photoelectric conversion device; a transfer transistor connected to the photoelectric conversion device and the first floating diffusion region; a reset transistor connected to the first floating diffusion region; a dual conversion gain (DCG) transistor between the first floating diffusion region and the reset transistor; a second floating diffusion region between the DCG transistor and the reset transistor; and an extension pattern, a first portion of the extension pattern being in contact with the second floating diffusion region.