The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 29, 2020

Filed:

Apr. 16, 2018
Applicant:

The Japan Steel Works, Ltd., Tokyo, JP;

Inventor:

Naoyuki Kobayashi, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/786 (2006.01); G02F 1/1368 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/04 (2006.01); H01L 23/544 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1296 (2013.01); G02F 1/1368 (2013.01); H01L 21/02422 (2013.01); H01L 21/02488 (2013.01); H01L 21/02532 (2013.01); H01L 21/02595 (2013.01); H01L 21/02678 (2013.01); H01L 21/02691 (2013.01); H01L 27/1222 (2013.01); H01L 27/1285 (2013.01); H01L 29/66765 (2013.01); H01L 29/78678 (2013.01); G02F 2202/104 (2013.01); H01L 23/544 (2013.01); H01L 29/04 (2013.01); H01L 2223/54426 (2013.01);
Abstract

Provided is a method of manufacturing a display, a display, and a liquid crystal television that can improve productivity and make a grain size uniform. A method of manufacturing a display includes: (A) deriving, when a laser beam is applied to an aSi filmprovided on a substrateto thereby polycrystallize the aSi filmand form a pSi film, a relationship between energy density of the laser beam and a grain size of the pSi film; (B) selecting a predetermined range of the energy density in the derived relationship; and (C) irradiating a first area including the aSi filmwith a laser beam at energy density in the selected range of the energy density to thereby polycrystallize the aSi filmand form the pSi film


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