The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 29, 2020

Filed:

Sep. 23, 2019
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Chun Yu Wong, Ballston Lake, NY (US);

Kwan-Yong Lim, Niskayuna, NY (US);

Seong Yeol Mun, Cohoes, NY (US);

Jagar Singh, Clifton Park, NY (US);

Hui Zang, Guilderland, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/525 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5256 (2013.01); H01L 21/76877 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/53209 (2013.01); H01L 21/31053 (2013.01);
Abstract

One illustrative integrated circuit product disclosed herein includes a vertically oriented semiconductor (VOS) structure positioned above a semiconductor substrate, a conductive silicide vertically oriented e-fuse positioned along at least a portion of a vertical height of the VOS structure wherein the conductive silicide vertically oriented e-fuse comprises a metal silicide material that extends through at least a portion of an entire lateral width of the VOS structure, and a conductive metal silicide region in the semiconductor substrate that is conductively coupled to the conductive silicide vertically oriented e-fuse.


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