The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2020
Filed:
Mar. 23, 2018
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Brent A. Anderson, Jericho, VT (US);
Edward J. Nowak, Shelburne, VT (US);
Assignee:
GlobalFoundries Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/311 (2006.01); H01L 21/3105 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76835 (2013.01); H01L 21/31051 (2013.01); H01L 21/31053 (2013.01); H01L 21/31144 (2013.01); H01L 21/7681 (2013.01); H01L 21/76819 (2013.01); H01L 21/76832 (2013.01); H01L 21/76834 (2013.01); H01L 21/76877 (2013.01); H01L 21/76897 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 23/53295 (2013.01); H01L 21/76885 (2013.01);
Abstract
A method of forming a via and a wiring structure formed are disclosed. The method may include forming a conductive line in a first dielectric layer; forming a hard mask adjacent to the conductive line after the conductive line forming; forming a second dielectric layer over the hard mask; and forming a via opening to the conductive line in the second dielectric layer. The via opening lands at least partially on the hard mask to self-align the via opening to the conductive line. A via may be formed by filling the via opening with a conductor.