The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 29, 2020

Filed:

Feb. 21, 2019
Applicant:

Toshiba Memory Corporation, Tokyo, JP;

Inventors:

Seiji Morita, Tokyo, JP;

Takashi Sato, Kanagawa, JP;

Ryosuke Yamamoto, Aichi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/027 (2006.01); H01L 21/3115 (2006.01); H01L 21/3105 (2006.01); G03F 7/38 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0273 (2013.01); G03F 7/38 (2013.01); H01L 21/3115 (2013.01); H01L 21/31058 (2013.01); H01L 21/31144 (2013.01);
Abstract

In one embodiment, a pattern forming method includes forming a first film on a substrate. The method further includes supplying energy to the first film to form a first region to which the energy have been supplied, and a second region including at least a region to which the energy has not been supplied. The method further includes impregnating at least the first region out of the first and second region with metal atoms. The method further includes developing the first film after impregnating the first region with the metal atoms to remove the second region while leaving the first region.


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