The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2020
Filed:
Dec. 15, 2017
Sharp Kabushiki Kaisha, Sakai, JP;
Shinji Nakajima, Sakai, JP;
Hirohiko Nishiki, Sakai, JP;
Hirohide Mimura, Sakai, JP;
Yuhichi Saitoh, Sakai, JP;
Yujiro Takeda, Sakai, JP;
Shogo Murashige, Sakai, JP;
Izumi Ishida, Sakai, JP;
Tohru Okabe, Sakai, JP;
SHARP KABUSHIKI KAISHA, Sakai, JP;
Abstract
Provided is a method for manufacturing a semiconductor device, the semiconductor device including a substrate, and an oxide semiconductor TFT that is supported by the substrate and includes an oxide semiconductor film as an active layer. The method includes: (A) preparing MO gas containing a first organometallic compound that contains In and a second organometallic compound that contains Zn; and (B) supplying gas containing the MO gas and oxygen to the substrate placed in a chamber under a condition in which the substrate is heated to 500° C. or lower, and growing an oxide semiconductor film containing In and Zn on the substrate using an MOCVD method. Step (B) is performed under a condition in which plasma is formed in the chamber.