The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 29, 2020

Filed:

Aug. 02, 2019
Applicants:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Toshiba Memory Corporation, Minato-ku, JP;

Inventors:

Amr Ismail, Bristol, GB;

Magnus Stig Torsten Sandell, Bristol, GB;

Assignees:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Toshiba Memory Corporation, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/16 (2006.01); G11C 16/10 (2006.01); G11C 11/56 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); G11C 11/5628 (2013.01); G11C 16/0483 (2013.01); G11C 16/16 (2013.01);
Abstract

A method of storing a number of data values in a plurality of flash memory cells wherein each flash memory cell has a plurality of storage states and each data value is selected from a set of possible data values. The method comprises programming the number of data values to the plurality of flash memory cells using a mapping which uniquely associates each combination of storage states for the plurality of flash memory cells with a concatenated data value from a set of concatenated data values wherein the set of concatenated data values comprises a concatenated data value for every combination of possible data values for the number of data values, the concatenated data value has a position for each data value in the number of data values and the mapping is such that between adjacent storage states all but one data values are identical and each position in the concatenated data value changes the data value it represents between the same storage states on each flash memory cell.


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