The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2020
Filed:
Mar. 04, 2019
Memory system and method of controlling memory system for calculating voltage value for reading data
Toshiba Memory Corporation, Tokyo, JP;
Ryo Sekiguchi, Tokyo, JP;
Shingo Yanagawa, Kanagawa, JP;
Yasuhiko Kurosawa, Kanagawa, JP;
Eriko Akaihata, Kanagawa, JP;
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Abstract
A memory system includes a first memory, a second memory, and a first circuit. The first memory includes a memory cell array including memory cell transistors, and a peripheral circuit configured to read data of a plurality of bits stored in a memory cell transistor of the memory cell array based on a comparison between threshold voltages of the memory cell transistor and at least a part of n determination voltages (n≥3). The first circuit is configured to calculate an estimated value of each of n−m determination voltages based on values of m determination voltages (2≤m≤n−1) among the n determination voltages, and calculate a difference between a value of each of the n−m determination voltages and a corresponding estimated value. The second memory is configured to store values of the m determination voltages and the difference for each of the n−m determination voltages.