The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 29, 2020

Filed:

Sep. 13, 2018
Applicant:

Samsung Display Co. Ltd., Yongin-si, KR;

Inventors:

Jang Mi Kang, Seoul, KR;

Ji Sun Kim, Seoul, KR;

Mu Kyung Jeon, Ulsan, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G09G 3/20 (2006.01); G09G 3/3283 (2016.01); G09G 3/3291 (2016.01); G09G 3/3266 (2016.01); G09G 3/3233 (2016.01); G09G 3/3258 (2016.01); H01L 27/12 (2006.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
G09G 3/3283 (2013.01); G09G 3/3233 (2013.01); G09G 3/3258 (2013.01); G09G 3/3266 (2013.01); G09G 3/3291 (2013.01); H01L 27/124 (2013.01); H01L 27/1222 (2013.01); H01L 27/1225 (2013.01); H01L 27/1251 (2013.01); H01L 27/1255 (2013.01); H01L 27/3244 (2013.01); G09G 2300/043 (2013.01); G09G 2300/0426 (2013.01); G09G 2310/0264 (2013.01); H01L 27/3265 (2013.01); H01L 27/3276 (2013.01);
Abstract

A display device including a light-emitting diode, a first transistor configured to supply a driving current to the light-emitting diode, a second transistor configured to transmit a data signal to the first transistor, a third transistor configured to transmit the data signal compensated with a threshold voltage to a gate electrode of the first transistor, a first scan line connected to a gate electrode of the second transistor, a second scan line connected to a gate electrode of the third transistor and insulated from the first scan line, and a conductive pattern connected to the gate electrode of the first transistor and insulated from the first scan line and the second scan line. The conductive pattern overlaps the first scan line and the second scan line, and the conductive pattern includes a stem part extending in one direction and a branch part branching from the stem part and overlapping the first scan line.


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