The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2020
Filed:
Oct. 05, 2016
Applicant:
Hewlett-packard Development Company, L.p., Spring, TX (US);
Inventors:
George H. Corrigan, III, Corvallis, OR (US);
Chantelle Domingue, Corvallis, OR (US);
Sadiq Bengali, Corvallis, OR (US);
Assignee:
Hewlett-Packard Development Company, L.P., Spring, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 27/12 (2006.01); B81B 7/00 (2006.01); G01N 27/26 (2006.01); H01L 27/04 (2006.01); H01L 21/82 (2006.01);
U.S. Cl.
CPC ...
G01N 27/128 (2013.01); B81B 7/0025 (2013.01); G01N 27/26 (2013.01); B81B 2201/0214 (2013.01); B81B 2203/04 (2013.01); H01L 21/82 (2013.01); H01L 27/04 (2013.01);
Abstract
The present disclosure is drawn to an insulated sensor including a silicon substrate with active circuitry on a surface thereof, an electrode disposed on the silicon substrate, a passivation layer having a thickness from greater than 500 Angstroms to 3,000 Angstroms disposed on the active circuitry, and an electrode insulating layer having a thickness from 10 Angstroms to 500 Angstroms disposed on the electrode.