The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 29, 2020

Filed:

Dec. 20, 2018
Applicant:

Soulbrain Co., Ltd., Seongnam-si, KR;

Inventors:

Ja Hwa Ahn, Seongnam-si, KR;

Myeong Hoon Han, Seongnam-si, KR;

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09G 1/02 (2006.01); C09G 1/16 (2006.01); B24B 37/24 (2012.01); H01L 21/321 (2006.01); H01B 3/12 (2006.01); B24B 37/04 (2012.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
C09G 1/02 (2013.01); B24B 37/044 (2013.01); B24B 37/24 (2013.01); C09G 1/16 (2013.01); H01B 3/12 (2013.01); H01L 21/3212 (2013.01); H01L 21/31053 (2013.01);
Abstract

The present invention relates to a method for polishing an insulating film of a semiconductor element, the method comprising polishing an insulating film, which is formed by embedding conductive patterns formed on a substrate, with a polishing slurry composition comprising a polishing agent including cerium oxide particles and an anionic dispersant, and a polishing additive composition comprising an anionic polymer, a cationic compound, a nonionic surfactant, a dishing inhibitor, and an amphoteric ionic compound, wherein the anionic polymer has a polymer distribution index (PDI) of 3.5 to 5.5, to remove a step associated with the insulating film.


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