The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 29, 2020

Filed:

Jun. 13, 2020
Applicant:

Xiamen Sanan Optoelectronics Technology Co., Ltd., Xiamen, CN;

Inventors:

Chaoyu Wu, Xiamen, CN;

Chun-I Wu, Xiamen, CN;

Junkai Huang, Xiamen, CN;

Duxiang Wang, Xiamen, CN;

Hongliang Lin, Xiamen, CN;

Yi-Jui Huang, Xiamen, CN;

Ching-Shan Tao, Xiamen, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
A01G 7/04 (2006.01); H01L 33/06 (2010.01); H01L 33/08 (2010.01); H01L 33/10 (2010.01);
U.S. Cl.
CPC ...
A01G 7/045 (2013.01); H01L 33/06 (2013.01); H01L 33/08 (2013.01); H01L 33/10 (2013.01); Y02P 60/14 (2015.11);
Abstract

A light-emitting diode includes a PN junction light-emitting portion over a substrate; wherein the PN junction light-emitting portion includes an alternating-layer structure of alternating a strained light-emitting layer and a barrier layer, wherein the strained light-emitting layer with a component formula of GaInAsP, 0<X<1 and 0<Y≤0.05, and the barrier layer has a component formula of (AlGa)InP, 0.3≤a≤1 and 0<b<1; when a current of 350 mA flows through the PN junction light-emitting portion in forward direction, the light-emitting diode has an output power at least 202.2 mW.


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