The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 22, 2020

Filed:

May. 21, 2019
Applicant:

Sivantos Pte. Ltd., Singapore, SG;

Inventors:

Stefan Aschoff, Eckental, DE;

Stefan Petrausch, Erlangen, DE;

Assignee:

Sivantos Pte. Ltd., Singapore, SG;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H04R 25/00 (2006.01); G10K 11/178 (2006.01); G10L 21/0232 (2013.01);
U.S. Cl.
CPC ...
H04R 25/453 (2013.01); G10K 11/1783 (2018.01); G10K 11/17813 (2018.01); G10K 11/17819 (2018.01); G10L 21/0232 (2013.01); H04R 25/505 (2013.01); H04R 25/305 (2013.01); H04R 2225/41 (2013.01); H04R 2460/01 (2013.01);
Abstract

In a method that reduces the occurrence of acoustic feedback in a hearing device, a first wearing situation is created that determines a positioning of the hearing device relative to the wearer. For the first wearing situation, a first usage situation is created being a body movement of the wearer of the hearing device and/or a relative position of an external object relative to the body of the wearer. A first number of frequency-resolved curves of a feedback tendency of the hearing device are determined for the first use situation. A first criticality measure is ascertained based on the frequency-resolved curve for the first use situation that contains information on a frequency range that is critical with respect to an occurrence of acoustic feedback and a corresponding relative probability of acoustic feedback, and a target is established for adapting a hearing device parameter based on the first criticality measure.


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