The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 22, 2020

Filed:

May. 17, 2019
Applicant:

Murata Manufacturing Co., Ltd., Kyoto, JP;

Inventor:

Hiroshi Nishikawa, Kyoto, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04B 1/04 (2006.01); H04B 1/00 (2006.01); H03H 9/13 (2006.01); H04B 1/52 (2015.01); H03H 9/205 (2006.01); H03H 9/54 (2006.01); H03H 9/56 (2006.01); H05K 1/02 (2006.01); H05K 1/18 (2006.01); H03H 9/25 (2006.01); H03H 9/64 (2006.01); H04B 1/18 (2006.01);
U.S. Cl.
CPC ...
H04B 1/0475 (2013.01); H03H 9/13 (2013.01); H03H 9/205 (2013.01); H03H 9/25 (2013.01); H03H 9/542 (2013.01); H03H 9/568 (2013.01); H03H 9/64 (2013.01); H04B 1/00 (2013.01); H05K 1/0216 (2013.01); H05K 1/0243 (2013.01); H05K 1/181 (2013.01); H04B 1/18 (2013.01); H04B 1/52 (2013.01); H05K 2201/1006 (2013.01); H05K 2201/10083 (2013.01);
Abstract

A radio-frequency module () includes a module substrate () and a filter (). The filter () has a sensitive GND electrode and a non-sensitive GND electrode that are connected to an external-connection ground terminal of the module substrate (), and parallel-arm resonators. An inductance component generated by the sensitive GND electrode shifts, by a first shift amount, an attenuation pole that corresponds to a parallel-arm resonator and that is formed near a pass band. An inductance component generated by the non-sensitive GND electrode shifts, by a second shift amount, an attenuation pole that corresponds to a parallel-arm resonator and that is formed near the pass band. The first shift amount is larger than the second shift amount, and the distance between the sensitive GND electrode and the external-connection ground terminal is smaller than the distance between the non-sensitive GND electrode and the external-connection ground terminal.


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