The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2020
Filed:
May. 22, 2019
Kunshan New Flat Panel Display Technology Center Co., Ltd., Kunshan, CN;
Kunshan Go-visionox Opto-electronics Co., Ltd., Jiangsu, CN;
Jiantai Wang, Jiangsu, CN;
Rubo Xing, Jiangsu, CN;
Xiaolong Yang, Jiangsu, CN;
Huimin Liu, Jiangsu, CN;
Ping Sun, Jiangsu, CN;
Dong Wei, Jiangsu, CN;
KUNSHAN NEW FLAT PANEL DISPLAY TECHNOLOGY CENTER CO., LTD., Kunshan, CN;
KUNSHAN GO-VISIONOX OPTO-ELECTRONICS CO., LTD., Kunshan, CN;
Abstract
The disclosure relates to a quantum dot light-emitting diode device and a manufacturing method and an apparatus thereof, which are used to alleviate the problem of interface quenching caused by the large density of the defect state of nanoparticles of the electron transport layer in the prior art. The method includes: dissolving a polyelectrolyte and nanoparticles having inorganic semiconductor properties to form a first mixed solution; depositing the first mixed solution on one surface of the formed quantum dot light-emitting layer to form an electron transport layer containing the polyelectrolyte and the nanoparticles. The end groups carried by at least a portion of the polyelectrolyte are capable of filling surface defects of the nanoparticles in the electron transport layer.