The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 22, 2020

Filed:

Sep. 16, 2019
Applicant:

Cerfe Labs, Inc., Austin, TX (US);

Inventors:

Lucian Shifren, San Jose, CA (US);

Carlos Alberto Paz de Araujo, Colorado Springs, CO (US);

Jolanta Bozena Celinska, Colorado Springs, CO (US);

Christopher Randolph McWilliams, Colorado Springs, CO (US);

Assignee:

Arm Limited, Cambridge, GB;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/145 (2013.01); H01L 27/249 (2013.01); H01L 45/04 (2013.01); H01L 45/1226 (2013.01); H01L 45/1233 (2013.01); H01L 45/146 (2013.01); H01L 45/1608 (2013.01); H01L 45/1616 (2013.01); H01L 45/1641 (2013.01);
Abstract

Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In particular embodiments, formation of a CEM switch may comprise depositing metal layers, such layers of a transition metal, over a conductive substrate. Dopant layers may subsequently be deposited on the layers of the transition metal, followed by annealing of the layers of transition metal and dopant layers. Responsive to annealing, dopant from the dopant layers may diffuse into the one or more layers of transition metal, thereby forming a CEM.


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