IDiyas

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10872996 B1

PDFFull Text
Date of Patent:
Dec. 22, 2020

Filed:

Feb. 01, 2019

Semiconductor device and method of forming the same

Applicant:

The Hong Kong University of Science and Technology, Hong Kong, CN;

Inventors:

Qinglin He, Los Angeles, CA (US);

Ying Hoi Lai, Hong Kong, CN;

Yi Liu, Hong Kong, CN;

Iam Keong Sou, Hong Kong, CN;

Assignee:

The Hong Kong University of Science and Technology, Hong Kong, CN;

Attorney:

Osha Bergman Watanabe & Burton LLP

Primary Examiner:

Omar F Mojaddedi

Int. Cl.
CPC ...
H01L 31/108 (2006.01); H01L 31/18 (2006.01); H01L 31/032 (2006.01); H01L 31/0224 (2006.01); H01L 31/036 (2006.01); H01L 21/02 (2006.01); H01L 29/872 (2006.01); H01L 29/78 (2006.01); H01L 29/267 (2006.01); H01L 29/22 (2006.01); H01L 31/0328 (2006.01); H01L 21/66 (2006.01); H01L 31/0336 (2006.01); H01L 31/00 (2006.01); H01L 29/12 (2006.01); H01L 31/0304 (2006.01);
U.S. Cl.
CPC ...
H01L 31/108 (2013.01); H01L 22/26 (2013.01); H01L 29/22 (2013.01); H01L 29/267 (2013.01); H01L 31/00 (2013.01); H01L 31/022408 (2013.01); H01L 31/022491 (2013.01); H01L 31/036 (2013.01); H01L 31/0328 (2013.01); H01L 31/0336 (2013.01); H01L 31/18 (2013.01); H01L 21/0259 (2013.01); H01L 21/02395 (2013.01); H01L 21/02568 (2013.01); H01L 21/02631 (2013.01); H01L 29/122 (2013.01); H01L 31/032 (2013.01); H01L 31/0304 (2013.01);
Abstract

A UV radiation detector includes: a diode including a substrate having a first side and a second side, the first side and the second side being located on opposing faces of the substrate, an active layer including rocksalt phase crystalline structure CaS disposed on the first side of the substrate, an electrical contact disposed on the second side of the substrate, and a semi-transparent conducting layer disposed on the active layer; and a circuit connecting the semi-transparent conducting layer and the electrical contact. The UV radiation detector detects radiation having a wavelength between 200 and 280 nm.

Find Patent Forward Citations

Loading…