The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2020
Filed:
Mar. 28, 2019
Applicant:
Stmicroelectronics (Research & Development) Limited, Marlow, GB;
Inventor:
Laurence Stark, Edinburgh, GB;
Assignee:
STMICROELECTRONICS (RESEARCH & DEVELOPMENT) LIMITED, Marlow, GB;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/10 (2006.01); H01L 31/02 (2006.01); H01L 31/107 (2006.01); H01L 31/0352 (2006.01); H01L 31/103 (2006.01); H01L 31/18 (2006.01); H01L 29/72 (2006.01); G01J 1/44 (2006.01);
U.S. Cl.
CPC ...
H01L 31/107 (2013.01); H01L 29/72 (2013.01); H01L 31/02027 (2013.01); H01L 31/0352 (2013.01); H01L 31/1037 (2013.01); H01L 31/1804 (2013.01); G01J 2001/4466 (2013.01); Y02E 10/547 (2013.01); Y02P 70/50 (2015.11);
Abstract
An embodiment method of manufacturing an avalanche diode includes forming a first trench in a substrate material, filling the first trench with a first material that comprises a dopant, and causing the dopant to diffuse from the first trench to form part of a PN junction. An avalanche diode array can be formed to include a number of the avalanche diodes.