The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 22, 2020

Filed:

Jul. 24, 2017
Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventor:

Kenta Matsuyama, Kadoma, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0236 (2006.01); H01L 31/0747 (2012.01); H01L 31/18 (2006.01); H01L 31/0288 (2006.01); H01L 31/0376 (2006.01); H01L 31/20 (2006.01); H01L 31/0352 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02363 (2013.01); H01L 31/0288 (2013.01); H01L 31/03762 (2013.01); H01L 31/0747 (2013.01); H01L 31/1804 (2013.01); H01L 31/202 (2013.01); H01L 31/03529 (2013.01); Y02E 10/50 (2013.01); Y02P 70/521 (2015.11);
Abstract

A solar cell is made which has a first conduction-type crystalline silicon substrate having a texture provided on the surface, and an i-type amorphous silicon layer located on the surface of the crystalline silicon substrate, wherein the texture has a larger radius of curvature Rof root parts thereof than the radius of curvature Rof peak parts thereof. The crystalline silicon substrate has a first conduction-type highly-doped region containing a first conduction-type dopant on the surface thereof, and the dopant concentration in the first conduction-type highly-doped region is higher than that in the center in the thickness direction of the crystalline silicon substrate.


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