The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2020
Filed:
Jul. 24, 2019
Glc Semiconductor Group (Cq) Co., Ltd., Chongqing, CN;
Yi-Chun Shih, Nantou County, TW;
Shun-Min Yeh, Hsinchu, TW;
GLC SEMICONDUCTOR GROUP (CQ) CO., LTD., Chongqing, CN;
Abstract
A manufacturing method of a semiconductor device includes the following steps. At least one mesa structure is provided. The mesa structure includes a III-V compound semiconductor layer. A passivation layer is formed on the mesa structure. A gate dielectric layer is formed on the passivation layer, and a gate electrode is formed on the gate dielectric layer. An etching process is performed to the gate dielectric layer for thinning the gate dielectric layer before the step of forming the gate electrode. The thickness of the gate dielectric layer may be modified by the etching process, and the electrical performance of the semiconductor device may be enhanced accordingly.