The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2020
Filed:
Jan. 14, 2019
Mitsubishi Electric Corporation, Tokyo, JP;
Ze Chen, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A semiconductor device includes gate trenches and dummy gate trenches formed on the upper surface side of a semiconductor substrate, gate electrodes embedded in the gate trenches, dummy gate electrodes embedded in the dummy gate trenches, a channel layer formed in the surface portion on the upper surface side of the semiconductor substrate, a carrier storage layer formed below the channel layer, and a collector layer formed on the lower surface side of the semiconductor substrate. A relationship D<D<D<Dholds true, where Dis the depth of the bottoms of the gate electrodes, Dis the depth of the bottoms of the dummy gate electrodes, Dis the depth of the bottom of the carrier storage layer, and Dis the depth of the junction between the channel layer and the carrier storage layer.